pa1902 description the pa1902 is a switching devic e, which can be driven directly by a 4.5 v power source. this pa1902 features a low on-stat e resistance and excellent switching characteristics, and is suitable for applications such as power management switch of portable machine and so on. features ? 4.5 v drive available ? low on-state resistance r ds(on)1 = 17 m ? typ. (v gs = 10 v, i d = 3.5 a) r ds(on)2 = 22 m ? typ. (v gs = 4.5 v, i d = 3.5 a) ordering information part number package pa1902te sc-95 (mini mold thin type) marking: ty absolute maximum ratings (t a = 25c) drain to source voltage (v gs = 0 v) v dss 30 v gate to source voltage (v ds = 0 v) v gss 20 v drain current (dc) i d(dc) 7.0 a drain current (pulse) note1 i d(pulse) 28 a total power dissipation p t1 0.2 w total power dissipation note2 p t2 2.0 w channel temperature t ch 150 c storage temperature t stg ? 55 to +150 c notes 1. pw 10 s, duty cycle 1% 2. mounted on fr-4 board of 50 mm x 50 mm x 1.6 mm, t 5 sec. package drawing (unit: mm) 0.65 0.9 to 1.1 0 to 0.1 0.16 +0.1 ?0.06 0.4 2.8 0.2 1.5 0.95 1.9 2.9 0.2 0.32 +0.1 ?0.05 0.95 0.65 +0.1 ?0.15 123 654 1, 2, 5, 6: drain 3 : gate 4 : source equivalent circuit source body diode gate drain m product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (t a = 25c) characteristics symbol test conditions min. typ. max. unit zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1.0 a gate leakage current i gss v gs = 20 v, v ds = 0 v 100 na gate cut-off voltage v gs(off) v ds = 10 v, i d = 1.0 ma 1.5 2.0 2.5 v forward transfer admittance | y fs | v ds = 10 v, i d = 3.5 a 3.0 s drain to source on-state resistance r ds(on)1 v gs = 10 v, i d = 3.5 a 17 22 m ? r ds(on)2 v gs = 4.5 v, i d = 3.5 a 22 30 m ? input capacitance c iss v ds = 10 v 780 pf output capacitance c oss v gs = 0 v 180 pf reverse transfer capacitance c rss f = 1 mhz 120 pf turn-on delay time t d(on) v dd = 15 v, i d = 1.0 a 16 ns rise time t r v gs = 10 v 10 ns turn-off delay time t d(off) r g = 6.0 ? 108 ns fall time t f 56 ns total gate charge q g v dd = 15 v 8.0 nc gate to source charge q gs v gs = 5.0 v 2.7 nc gate to drain charge q gd i d = 7.0 a 3.4 nc body diode forward voltage v f(s-d) i f = 7.0 a, v gs = 0 v 0.84 v test circuit 2 gate charge test circuit 1 switching time pg. r g 0 v gs d.u.t. r l v dd = 1 s duty cycle 1% pg. 50 ? d.u.t. r l v dd i g = 2 ma v gs wave form v ds wave form v gs v ds 10% 0 0 90% 90% 90% v gs v ds t on t off t d(on) t r t d(off) t f 10% 10% pa1902 m product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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